Plastic deformation and phase transition in chalcogenides: insights from atomistic computer simulations
Wei Zhang
Xi’an Jiaotong University, Xi’an, China
Abstract
Chalcogenides have enabled many important electronic and optical applications, including flexible electronics. Previously, it is necessary to sputter chalcogenide thin films onto flexible substrates, because most chalcogenides are brittle. Recently, exceedingly large plasticity was discovered in a semiconducting chalcogenide bulk crystal, namely, hexagonal InSe. In this talk, I will provide atomic insights into the mechanical deformation mechanism in a couple of hexagonal III-VI bulk crystals, including hexagonal InSe / GaSe and monoclinic GaTe. In the second part of the talk, I will discuss the use of solid-state phase transition between the amorphous and crystalline phase of a group of chalcogenides, including GeTe and Ge-Sb-Te alloys, for non-volatile memory and neuromorphic computing applications. I will highlight how atomistic computer simulations can guide experimental research for better materials and devices in these fields.
Mots clés : amorphization atomic scale calculations chalcogenide ductility
Informations
- Patrick Cordier (patrick.cordier)
-
- 5 décembre 2024 14:48
- Webinaire
- Anglais